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33 One of the most commonly employed materials for the production of high-resolution stamps in soft lithography is polydimethylsiloxane (PDMS) rubber PDMS is selected for its very high-resolution molding capabilities,34 chemical stability, and low mechanical stiffness ( 1 10 MPa) that facilitates fully conformal contact on reasonably smooth (eg, coarsely polished) surfaces without exhibiting excessive tackiness, which allows easy handling and manageable levels of distortion Soft lithography using molded PDMS stamps offers several interesting microfabrication capabilities: nanofabrication and patterning resolutions below 100 nm,34 36 patterning on nonplanar surfaces,37 40 and potentially low-cost, large-area operation In this context, stamp-based or dry transfer printing methods represent a deterministic alternative for the transfer of inorganic elements onto new substrates that, in contrast to self-assembly, maintains solid mechanical contact to the elements via stamps throughout the entire transfer process.

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As a result, the elements maintain their organization, thereby minimizing misplacement of the elements and other yield-reducing errors The array in the lower right of Fig 132 represents a precisely ordered set of inorganic micro-elements transferred in this way to a polyethyleneterephtalate (PET) sheet coated with a thin lm of polyurethane (PU) The transfer printing process begins with the release of micro-elements from the mother wafer, as described above Organization of the released elements is maintained by structures that anchor or tether them to the mother substrate Without these structures, the elements may lose organization partially or completely, but interconnecting the elements into suf ciently large ( millimeter) networks can afford organization of elements relative to each other and negligible motion of the networks relative to the mother wafer in some cases The printing proceeds with the application of a stamp to elements on the mother substrate.

If Web Service methods were guaranteed to work at all times, you wouldn't need any form of error notification or processing capabilities. Unfortunately, things can go wrong (and often do). As such, errors or exceptions that occur in a Web Service method call need to be communicated back to the consumer of the Web Service in some manner. This is where SOAP exceptions come into play. They're used to return error or exception information to the consumer of a Web Service as the result of a failed method call. Note The SOAP specification uses the term faults rather than exceptions. This chapter uses the latter to maintain consistency with the terminology used within the .NET Framework classes and documentation. This terminology is also reflected in the SOAP classes within .NET.

PL measurements were performed on 76 mm (3 in) long annealed lms grown by the process used in the previous experiment. PL spectra of the leading and trailing edges were recorded for as-deposited, S-annealed, and Ar-annealed lms. As mentioned in previous sections, the leading edges were always more In-rich than the trailing edges and therefore had lower Cu-to-In ratios (0.84 compared with the 1.03). Four different emission bands PL1 at 1.45 eV, PL2 at 1.43 eV, PL3 at 1.37 eV, and PL4 at 1.32 eV in Fig. 6.27 were identi ed in both the leading and trailing edges of almost all samples (PL1 was not clearly seen in some samples). For the as-deposited lms, a near-band-edge emission can be seen for the trailing edge sample in Fig. 6.27. This is probably from the combination of excitonic recombination and other transitions associated with unidenti ed shallow defect levels.68 Clear differences between the leading and trailing edges were observed from emission bands associated with deeper defect levels. For the trailing edges, the intensities of PL3 at 1.37 eV were always higher than those of PL4 at 1.32 eV (Fig. 6.27). Finally, the broad, deep-level emission bands spanning from 1.32 eV to 1.24 eV actually tailed down to 0.9 eV, as measured by a Ge detector. After postdeposition Ar and Ar/S-annealing, the lms were studied again using PL. S-anneals reduced the relative intensities of the PL1, PL4, and broad emission bands, whereas Ar-anneals increased the relative intensity of the PL1 band. This can be seen in Fig. 6.28. We can also see in this gure that S-anneals suppressed the broad near-band-edge emission from the trailing edge samples. When EDS measurements were performed on the lms after S-anneals, an

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